N-channel transistor PHB45N03LT, 30A, 45A, 10uA, 0.016 Ohms, D2PAK ( TO-263 ), SOT-404, 25V. ID (T=100°C): 30A. ID (T=25°C): 45A. Idss (max): 10uA. On-resistance Rds On: 0.016 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): SOT-404. Voltage Vds(max): 25V. Assembly/installation: surface-mounted component (SMD). C(in): 920pF. Channel type: N. Cost): 260pF. Drain-source protection: zener diode. Function: Field effect power transistor. Logic level control. G-S Protection: no. Gate/source voltage Vgs: 15V. IDss (min): 0.05uA. Id(imp): 180A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 86W. Quantity per case: 1. RoHS: yes. Td(off): 78 ns. Td(on): 6 ns. Technology: TrenchMOS transistor. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 13/11/2025, 07:30