N-channel transistor IXFR200N10P, 75A, 133A, 1mA, 0.009 Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 100V

N-channel transistor IXFR200N10P, 75A, 133A, 1mA, 0.009 Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 100V

Quantity
Unit price
1-4
20.87£
5-9
19.88£
10-24
18.17£
25+
16.88£
Quantity in stock: 10

N-channel transistor IXFR200N10P, 75A, 133A, 1mA, 0.009 Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 100V. ID (T=100°C): 75A. ID (T=25°C): 133A. Idss (max): 1mA. On-resistance Rds On: 0.009 Ohms. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 7600pF. Channel type: N. Cost): 2900pF. Drain-source protection: diode. Function: Electrically Isolated Back Surface. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 400A. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 300W. Quantity per case: 1. RoHS: yes. Spec info: dv/dt 10V/ns. Td(off): 150 ns. Td(on): 30 ns. Technology: Polar HiPerFet Power MOSFET. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: IXYS. Quantity in stock updated on 13/11/2025, 21:11

Technical documentation (PDF)
IXFR200N10P
32 parameters
ID (T=100°C)
75A
ID (T=25°C)
133A
Idss (max)
1mA
On-resistance Rds On
0.009 Ohms
Housing
ISOPLUS247 ( TO-247 )
Housing (according to data sheet)
ISOPLUS247 ( TO-247 )
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
7600pF
Channel type
N
Cost)
2900pF
Drain-source protection
diode
Function
Electrically Isolated Back Surface
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
400A
Note
insulation voltage 2500V 50/60Hz, RMS, 1 minute
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
300W
Quantity per case
1
RoHS
yes
Spec info
dv/dt 10V/ns
Td(off)
150 ns
Td(on)
30 ns
Technology
Polar HiPerFet Power MOSFET
Trr Diode (Min.)
150 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
IXYS