N-channel transistor IRFB3607PBF, TO220AB
Quantity
Unit price
1-4
1.88£
5-9
1.17£
10-19
1.04£
20-49
0.97£
50+
0.91£
| Quantity in stock: 5 |
N-channel transistor IRFB3607PBF, TO220AB. Housing: TO220AB. : 'enhanced'. Assembly/installation: THT. Charge: 56nC. Drain current: 80A. Drain-source voltage: 75V. Gate-source voltage: ±20V. Packaging: tubus. Polarity: unipolar. Power: 140W. Technology: HEXFET®. Type of transistor: N-MOSFET. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 09/11/2025, 09:02
IRFB3607PBF
13 parameters
Housing
TO220AB
'enhanced'
Assembly/installation
THT
Charge
56nC
Drain current
80A
Drain-source voltage
75V
Gate-source voltage
±20V
Packaging
tubus
Polarity
unipolar
Power
140W
Technology
HEXFET®
Type of transistor
N-MOSFET
Original product from manufacturer
Infineon Technologies