N-channel transistor, 6.6A, 8.3A, 100uA, 0.017 Ohms, SO, SO-8, 30 v - IRF7807V

N-channel transistor, 6.6A, 8.3A, 100uA, 0.017 Ohms, SO, SO-8, 30 v - IRF7807V. N-channel transistor, 6.6A, 8.3A, 100uA, 0.017 Ohms, SO, SO-8, 30 v. ID (T=100°C): 6.6A. ID (T=25°C): 8.3A. Idss (max): 100uA. On-resistance Rds On: 0.017 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. Id(imp): 66A. IDss (min): 20uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 6.3 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 21/04/2025, 20:25.