N-channel transistor IRF3710Z, TO220, TO220AB
Quantity
Unit price
1-9
2.90£
10-49
1.81£
50-99
1.70£
100-199
1.67£
200+
1.63£
| Quantity in stock: 5 |
N-channel transistor IRF3710Z, TO220, TO220AB. Housing: TO220, TO220AB. Assembly/installation: THT. Charge: 82nC. Conditioning: tubus. Drain current: 59A. Drain-source voltage: 100V. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 920mK/W. Polarity: unipolar. Power: 160W. RoHS: yes. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 12/11/2025, 23:15
IRF3710Z
14 parameters
Housing
TO220, TO220AB
Assembly/installation
THT
Charge
82nC
Conditioning
tubus
Drain current
59A
Drain-source voltage
100V
Gate-source voltage
20V, ±20V
Housing thermal resistance
920mK/W
Polarity
unipolar
Power
160W
RoHS
yes
Technology
HEXFET®
Type of transistor
N-MOSFET, HEXFET
Original product from manufacturer
Infineon (irf)