N-channel transistor IRF1405PBF, TO-220, 55V, 0.0053 Ohms, 55V

N-channel transistor IRF1405PBF, TO-220, 55V, 0.0053 Ohms, 55V

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Unit price
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Quantity in stock: 326

N-channel transistor IRF1405PBF, TO-220, 55V, 0.0053 Ohms, 55V. Housing: TO-220. Drain-source voltage (Vds): 55V. Housing (JEDEC standard): -. On-resistance Rds On: 0.0053 Ohms. Drain-source voltage Uds [V]: 55V. Channel type: N. Ciss Gate Capacitance [pF]: 5480pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 169A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0053 Ohms @ 101A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRF1405PBF. Max drain current: 169A. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 330W. Number of terminals: 3. Power: 150W. RoHS: yes. Switch-off delay tf[nsec.]: 130 ns. Switch-on time ton [nsec.]: 13 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: International Rectifier. Quantity in stock updated on 13/11/2025, 16:06

Technical documentation (PDF)
IRF1405PBF
22 parameters
Housing
TO-220
Drain-source voltage (Vds)
55V
On-resistance Rds On
0.0053 Ohms
Drain-source voltage Uds [V]
55V
Channel type
N
Ciss Gate Capacitance [pF]
5480pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
169A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.0053 Ohms @ 101A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRF1405PBF
Max drain current
169A
Max temperature
+175°C.
Maximum dissipation Ptot [W]
330W
Number of terminals
3
Power
150W
RoHS
yes
Switch-off delay tf[nsec.]
130 ns
Switch-on time ton [nsec.]
13 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
International Rectifier