MOSFET transistor HGTG30N60B3D

Quantity	excl. VAT	VAT incl.
1 - 1	9.16£	10.99£
2 - 2	8.70£	10.44£
3 - 4	8.24£	9.89£
5 - 9	7.78£	9.34£
10 - 14	7.60£	9.12£
15 - 19	7.42£	8.90£
20 - 21	7.14£	8.57£

Quantity	U.P
1 - 1	9.16£	10.99£
2 - 2	8.70£	10.44£
3 - 4	8.24£	9.89£
5 - 9	7.78£	9.34£
10 - 14	7.60£	9.12£
15 - 19	7.42£	8.90£
20 - 21	7.14£	8.57£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 21

Set of 1

MOSFET transistor HGTG30N60B3D. MOSFET transistor. Channel type: N-P. Function: Ic 30A @ 25°C, 25A @ 110°C, Icm 220A (pulsed). Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 137 ns. Td(on): 36ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.45V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.2V. Gate/emitter voltage VGE(th)max.: 6V. CE diode: no. Germanium diode: no. Quantity in stock updated on 21/04/2025, 00:25.

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Delivery in 2-3 days, with postal tracking!