BAV199, SOT-23 ( TO-236 ), TO-236AB, 0.16A, 200mA, 500mA, SOT-23 ( TO236 ), 85V. Housing: SOT-23 ( TO-236 ). Housing (JEDEC standard): TO-236AB. Forward current [A]: 0.16A. Forward current (AV): 200mA. IFSM: 500mA. Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 85V. Assembly/installation: surface-mounted component (SMD). Cj: 2pF. Close voltage (repetitive) Vrrm [V]: 85V. Component family: dual small-signal diode. Surface mount (SMD). Configuration: surface-mounted component (SMD). Dielectric structure: Common anode-cathode (midpoint). Forward voltage Vf (min): 0.9V. Function: dual low-leakage diode. Ifsm [A]: 2A. Leakage current on closing Ir [A]: 5nA...80nA. MRI (max): 80nA. MRI (min): 5nA. Marking on the case: JYs. Max temperature: +150°C.. Number of terminals: 3. Number of terminals: 3. Production date: 2014/49. Quantity per case: 2. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--4.5A (tp=1us), 0.5A (tp=1s). Switching speed (regeneration time) tr [sec.]: 3us. Temperature: +150°C. Threshold voltage Vf (max): 1.25V. Trr Diode (Min.): 0.6us. [V]: 1V @ 10mA. Original product from manufacturer: Infineon Technologies. Minimum quantity: 10. Quantity in stock updated on 31/10/2025, 08:15