BAT54A-215, SOT-23 ( TO-236 ), 200mA, 0.2A, 600mA, SOT-23 ( TO236 ), 30 v

BAT54A-215, SOT-23 ( TO-236 ), 200mA, 0.2A, 600mA, SOT-23 ( TO236 ), 30 v

Quantity
Unit price
10-49
0.0357£
50-99
0.0319£
100-199
0.0281£
200+
0.0246£
+15000 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 2579
Minimum: 10

BAT54A-215, SOT-23 ( TO-236 ), 200mA, 0.2A, 600mA, SOT-23 ( TO236 ), 30 v. Housing: SOT-23 ( TO-236 ). Housing (JEDEC standard): -. Forward current (AV): 200mA. Forward current [A]: 0.2A. IFSM: 600mA. Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 30 v. Assembly/installation: surface-mounted component (SMD). Cj: 10pF. Close voltage (repetitive) Vrrm [V]: 30 v. Component family: double Schottky diode, SMD mounting. Configuration: surface-mounted component (SMD). Dielectric structure: common anode. Forward voltage Vf (min): 240mV. Function: Dual Schottky diode. Ifsm [A]: 0.6A. Leakage current on closing Ir [A]: 2uA. MRI (max): 2uA. Marking on the case: L42 or V3. Max temperature: +150°C.. Number of terminals: 3. Number of terminals: 3. Operating temperature: -65...+150°C. Quantity per case: 2. RoHS: yes. Semiconductor material: Sb. Spec info: IFSM--600mAp (t=10ms). Switching speed (regeneration time) tr [sec.]: 5 ns. Threshold voltage Vf (max): 800mV. Trr Diode (Min.): 5 ns. [V]: 0.4V @ 10mA. Original product from manufacturer: Nxp Semiconductors. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 12:18

Technical documentation (PDF)
BAT54A-215
32 parameters
Housing
SOT-23 ( TO-236 )
Forward current (AV)
200mA
Forward current [A]
0.2A
IFSM
600mA
Housing (according to data sheet)
SOT-23 ( TO236 )
VRRM
30 v
Assembly/installation
surface-mounted component (SMD)
Cj
10pF
Close voltage (repetitive) Vrrm [V]
30 v
Component family
double Schottky diode, SMD mounting
Configuration
surface-mounted component (SMD)
Dielectric structure
common anode
Forward voltage Vf (min)
240mV
Function
Dual Schottky diode
Ifsm [A]
0.6A
Leakage current on closing Ir [A]
2uA
MRI (max)
2uA
Marking on the case
L42 or V3
Max temperature
+150°C.
Number of terminals
3
Number of terminals
3
Operating temperature
-65...+150°C
Quantity per case
2
RoHS
yes
Semiconductor material
Sb
Spec info
IFSM--600mAp (t=10ms)
Switching speed (regeneration time) tr [sec.]
5 ns
Threshold voltage Vf (max)
800mV
Trr Diode (Min.)
5 ns
[V]
0.4V @ 10mA
Original product from manufacturer
Nxp Semiconductors
Minimum quantity
10