BAS28, SOT-143, 215mA, 0.215A, 1A, SOT-143, 85V

BAS28, SOT-143, 215mA, 0.215A, 1A, SOT-143, 85V

Quantity
Unit price
10-49
0.0304£
50-99
0.0258£
100+
0.0226£
+1313 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 2558
Minimum: 10

BAS28, SOT-143, 215mA, 0.215A, 1A, SOT-143, 85V. Housing: SOT-143. Housing (JEDEC standard): -. Forward current (AV): 215mA. Forward current [A]: 0.215A. IFSM: 1A. Housing (according to data sheet): SOT-143. VRRM: 85V. Assembly/installation: surface-mounted component (SMD). Cj: 1.5pF. Close voltage (repetitive) Vrrm [V]: 85V. Component family: dual small-signal diode. Surface mount (SMD). Configuration: surface-mounted component (SMD). Dielectric structure: Independent. Forward voltage Vf (min): 0.715V. Function: High Speed ​​Switching. Ifsm [A]: 4A. Leakage current on closing Ir [A]: 30nA..50uA. Marking on the case: JTp. Max temperature: +150°C.. Number of terminals: 4. Number of terminals: 4. Quantity per case: 2. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--t=1us 4Ap, t=1ms 1Ap.. Switching speed (regeneration time) tr [sec.]: 4 ns. Temperature: +150°C. Threshold voltage Vf (max): 1.25V. Trr Diode (Min.): 4 ns. [V]: 0.855V @ 10mA. Original product from manufacturer: Philips Semiconductors. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:01

Technical documentation (PDF)
BAS28
31 parameters
Housing
SOT-143
Forward current (AV)
215mA
Forward current [A]
0.215A
IFSM
1A
Housing (according to data sheet)
SOT-143
VRRM
85V
Assembly/installation
surface-mounted component (SMD)
Cj
1.5pF
Close voltage (repetitive) Vrrm [V]
85V
Component family
dual small-signal diode
Configuration
surface-mounted component (SMD)
Dielectric structure
Independent
Forward voltage Vf (min)
0.715V
Function
High Speed ​​Switching
Ifsm [A]
4A
Leakage current on closing Ir [A]
30nA..50uA
Marking on the case
JTp
Max temperature
+150°C.
Number of terminals
4
Number of terminals
4
Quantity per case
2
RoHS
yes
Semiconductor material
silicon
Spec info
IFSM--t=1us 4Ap, t=1ms 1Ap.
Switching speed (regeneration time) tr [sec.]
4 ns
Temperature
+150°C
Threshold voltage Vf (max)
1.25V
Trr Diode (Min.)
4 ns
[V]
0.855V @ 10mA
Original product from manufacturer
Philips Semiconductors
Minimum quantity
10