1N5819, DO-15, DO-204AL, 1A, 1A, 25A, DO-41 ( 5.2X2.7mm ), 40V

1N5819, DO-15, DO-204AL, 1A, 1A, 25A, DO-41 ( 5.2X2.7mm ), 40V

Quantity
Unit price
10-49
0.0458£
50-99
0.0389£
100-249
0.0346£
250+
0.0279£
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Equivalence available
Quantity in stock: 3182
Minimum: 10

1N5819, DO-15, DO-204AL, 1A, 1A, 25A, DO-41 ( 5.2X2.7mm ), 40V. Housing: DO-15. Housing (JEDEC standard): DO-204AL. Forward current (AV): 1A. Forward current [A]: 1A. IFSM: 25A. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). VRRM: 40V. Assembly/installation: PCB through-hole mounting. Cj: 55pF. Close voltage (repetitive) Vrrm [V]: 40V. Component family: Schottky rectifier diode. Conditioning: Ammo Pack. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode type: Schottky rectifier diode. Driving current: 1A. Forward voltage Vf (min): 0.6V. Function: Schottky rectifier diode. Ifsm [A]: 40A. Leakage current on closing Ir [A]: 0.5mA..10mA. Max reverse voltage: 40V. Max temperature: +150°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+125°C. Pulse current max.: 30A. Quantity per case: 1. RoHS: yes. Semiconductor material: Sb. Semiconductor structure: diode. Spec info: IFSM--25Ap, t=8.3ms. Switching speed (regeneration time) tr [sec.]: -. Threshold voltage Vf (max): 0.9V. Threshold voltage: 600mV. [V]: 0.6V @ 1A. Original product from manufacturer: Lge Technology. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 12:18

Technical documentation (PDF)
1N5819
36 parameters
Housing
DO-15
Housing (JEDEC standard)
DO-204AL
Forward current (AV)
1A
Forward current [A]
1A
IFSM
25A
Housing (according to data sheet)
DO-41 ( 5.2X2.7mm )
VRRM
40V
Assembly/installation
PCB through-hole mounting
Cj
55pF
Close voltage (repetitive) Vrrm [V]
40V
Component family
Schottky rectifier diode
Conditioning
Ammo Pack
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Diode type
Schottky rectifier diode
Driving current
1A
Forward voltage Vf (min)
0.6V
Function
Schottky rectifier diode
Ifsm [A]
40A
Leakage current on closing Ir [A]
0.5mA..10mA
Max reverse voltage
40V
Max temperature
+150°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-65...+125°C
Pulse current max.
30A
Quantity per case
1
RoHS
yes
Semiconductor material
Sb
Semiconductor structure
diode
Spec info
IFSM--25Ap, t=8.3ms
Threshold voltage Vf (max)
0.9V
Threshold voltage
600mV
[V]
0.6V @ 1A
Original product from manufacturer
Lge Technology
Minimum quantity
10

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