| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
1N5402, DO-27, 200V, 3A, 3A, 200A, 3A, DO-27 ( 9.2x5.2mm )
| +1932 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Obsolete product, soon to be removed from the catalog. Last items available | |
| Equivalence available | |
| Quantity in stock: 248 |
1N5402, DO-27, 200V, 3A, 3A, 200A, 3A, DO-27 ( 9.2x5.2mm ). Housing: DO-27. Housing (JEDEC standard): -. VRRM: 200V. Forward current (AV): 3A. Average Rectified Current per Diode: 3A. IFSM: 200A. Forward current [A]: 3A. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Assembly/installation: PCB through-hole mounting. Cj: 40pF. Close voltage (repetitive) Vrrm [V]: 200V. Component family: Standard rectifier diode. Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.1V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 3A. Forward Voltage (Max): <1.2V / 3A. Forward voltage Vf (min): 1.1V. Ifsm [A]: 200A. Information: -. Leakage current on closing Ir [A]: 10uA. MRI (max): 500uA. MRI (min): 5uA. MSL: -. Max reverse voltage: 200V. Max temperature: +175°C.. Mounting Type: THT. Note: GI. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+175°C. Pulse current max.: 200A. Quantity per case: 1. Reverse Leakage Current: <5uA / 200V. Reverse Recovery Time (Max): 1500ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Series: 1N54. Spec info: IFSM--200Ap t=8.3ms. Switching speed (regeneration time) tr [sec.]: -. Threshold voltage Vf (max): 1.1V. Threshold voltage: 1.2V, 1.1V. Trr Diode (Min.): 5us. [V]: 1.2V @ 3A. Original product from manufacturer: Dc Components Co. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 14:24