1N4148, DO-35 ( SOD27 ), 75V, 0.2A, 200mA, 0.3A, 500mA, DO-35. Housing: DO-35 ( SOD27 ). Housing (JEDEC standard): -. VRRM: 75V. Average Rectified Current per Diode: 0.2A. Forward current (AV): 200mA. Forward current [A]: 0.3A. IFSM: 500mA. Housing (according to data sheet): DO-35. Assembly/installation: PCB through-hole mounting. Capacitance: 4pF. Cj: 4pF. Close voltage (repetitive) Vrrm [V]: 100V. Component family: Small-signal silicon diode. Conduction voltage (threshold voltage): 1V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: switching diode. Driving current: 200mA. Forward Voltage (Max): <1.0V / 0.01A. Forward voltage Vf (min): 1V. Function: High-speed diodes. Ifsm [A]: 2A. Information: -. Leakage current on closing Ir [A]: 25nA..5uA. MRI (max): 50uA. MRI (min): 25nA. MSL: -. Manufacturer's marking: 1N4148. Max reverse voltage: 75V. Max temperature: +150°C.. Mounting Type: THT. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+200°C. Other name: IN4148. Power: 0.5W. Pulse current max.: 1A. Quantity per case: 1. Reaction time: 4ns. Reverse Leakage Current: 5uA / 75V. Reverse Recovery Time (Max): 4ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Semiconductor type: diode. Series: 1N4148. Spec info: Ifsm--1us 4A, 1ms 1A, 1s 0.5A. Switching speed (regeneration time) tr [sec.]: 4 ns. Threshold voltage Vf (max): 1V. Threshold voltage: 1V. Trr Diode (Min.): 4 ns. [V]: 1V @ 10mA. Original product from manufacturer: Div. Minimum quantity: 25. Quantity in stock updated on 23/11/2025, 12:29